sod - 1 23 plastic - encapsulate diodes MMSD914 s mall s ignal diode f eatures ? high v oltage markin g : 5d maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value unit v r rm maximum r epetitive r everse v oltage 10 0 v i o forward c urrent 0.2 i fsm non - repetitive peak f orward surge c urrent @ t = 1 ms 2 a p d power d issipation 400 mw r j a thermal r esistance from junc tion to a mbient 3 12 /w t j junction t emperature 150 t stg s torage t emperature - 5 5 ~+ 150 electrical c haracteristics (t a =25 unless otherwise specified) parameter symb ol test conditions m in typ m ax u nit i r = 5 a 75 v reverse voltage v (br) i r = 100 a 100 v v r = 20 v 2 5 n a reverse c urrent i r v r = 75 v 5 a forward voltage v f i f =1 0 ma 1 v total capacitance c tot v r = 0 v,f=1mhz 4 pf reverse r ecovery t ime t rr i f = i r = 30 ma, i rr =0.1i r , r l =100 4 ns sod - 1 23 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
048121620 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 0 100 200 300 400 500 600 0.0 0.4 0.8 1.2 1.6 0.1 1 10 100 0 20406080100 1 10 100 1000 10000 ta=25 f=1mhz capacitance characteristics reverse voltage v r (v) capacitance between terminals c t (pf) power derating curve power dissipation p d (mw) ambient temperature t a ( ) 0.3 3 30 300 3 30 300 3000 forward characteristics t a = 1 0 0 t a = 2 5 forward current i f (ma) forward voltage v f (v) reverse characteristics MMSD914 typical characteristics ta=100 ta=25 reverse current i r (na) reverse voltage v r (v) 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
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